UNISONIC TECHNOLOGIES CO., LTD
UT4232
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
The
UT4232
uses UTC advanced technology to provide
excellent R
DS(ON)
, low gate charge and to be operated with low gate
voltages. This device is suitable for applications, such as high-side
DC/DC conversion, notebook and sever.
FEATURES
* V
DS
(V)=30V
* I
D
=7A (V
GS
= 10V)
* R
DS(ON)
<22mΩ@V
GS
=10V
* R
DS(ON)
<32mΩ@V
GS
=4.5V
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
UT4232G-S08-R
Package
SOP-8
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-337.a
UT4232
PIN CONFIGURATION
Preliminary
Power MOSFET
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www.unisonic.com.tw
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QW-R502-337.a
UT4232
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Ta=25°C)(Note 2)
I
D
7.8
A
Pulsed Drain Current (Note 3)
I
DM
30
A
Power Dissipation (Ta=25°C)
2
W
P
D
Derate above Ta>25°C
0.016
W/°C
Junction Temperature
T
J
+150
°C
Junction and Storage Temperature Range
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in
2
copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min
3. Pulse width limited by T
J(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
Junction to Ambient
θ
JA
62.5
2
Note: Surface mounted on 1 in copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
=0 V, I
D
=250 µA
MIN
30
0.02
1
±100
1
3
22
32
720
230
200
10
7
22
8
13
3
9
1150
TYP
MAX UNIT
V
V/°C
µA
nA
V
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ΔBV
DSS
/ΔT
J
Reference to 25°C,I
D
=1mA
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
DS
=30 V,V
GS
=0 V
V
GS
=±20 V, V
DS
=0 V
V
D S
= V
GS
, I
D
=250 µA
V
GS
=10 V, I
D
=7 A
V
GS
=4.5 V, I
D
=5 A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0 V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
GS
=10V,V
DS
=15V, R
D
=15Ω,
Turn-ON Rise Time
t
R
R
G
=3.3Ω, I
D
=1 A
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=4.5 V, V
DS
=24 V, I
D
=7 A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=1.7 A, V
GS
=0 V
Reverse Recovery Time
t
RR
I
S
=7 A, V
GS
=0 V, dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
21
1.2
16
8
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www.unisonic.com.tw
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QW-R502-337.a
UT4232
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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