DTC124EL-AL3-R datasheet, PDF - EEWORLD Datasheet

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DTC124EL-AL3-R: DescriptionNPN DIGITAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size170KB，3 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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DTC124EL-AL3-R Overview

NPN DIGITAL TRANSISTOR

DTC124EL-AL3-R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	56
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

DTC124EL-AL3-R Related Products

	DTC124EL-AL3-R	DTC124EG-AE3-R	DTC124EG-AL3-R	DTC124EG-AN3-R	DTC124EL-AN3-R	DTC124E_11
Description	NPN DIGITAL TRANSISTOR	NPN DIGITAL TRANSISTOR	NPN DIGITAL TRANSISTOR	NPN DIGITAL TRANSISTOR	NPN DIGITAL TRANSISTOR	NPN DIGITAL TRANSISTOR
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	-
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	-
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-
Contacts	3	3	3	3	3	-
Reach Compliance Code	compli	compli	compli	compli	compli	-
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	-
Other features	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	-
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	-
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	-
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	-
Minimum DC current gain (hFE)	56	56	56	56	56	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-
Number of components	1	1	1	1	1	-
Number of terminals	3	3	3	3	3	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	-
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.15 W	0.15 W	-
surface mount	YES	YES	YES	YES	YES	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	-

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