NPN DIGITAL TRANSISTOR
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | UNISONIC TECHNOLOGIES CO.,LTD |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | BUILT IN BIAS RESISTOR RATIO IS 1 |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 56 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.2 W |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 250 MHz |
| DTC124EG-AE3-R | DTC124EG-AL3-R | DTC124EG-AN3-R | DTC124EL-AL3-R | DTC124EL-AN3-R | DTC124E_11 | |
|---|---|---|---|---|---|---|
| Description | NPN DIGITAL TRANSISTOR | NPN DIGITAL TRANSISTOR | NPN DIGITAL TRANSISTOR | NPN DIGITAL TRANSISTOR | NPN DIGITAL TRANSISTOR | NPN DIGITAL TRANSISTOR |
| Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | - |
| Maker | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | - |
| Contacts | 3 | 3 | 3 | 3 | 3 | - |
| Reach Compliance Code | compli | compli | compli | compli | compli | - |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - |
| Other features | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | - |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | - |
| Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V | 50 V | - |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | - |
| Minimum DC current gain (hFE) | 56 | 56 | 56 | 56 | 56 | - |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | - |
| Number of components | 1 | 1 | 1 | 1 | 1 | - |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | - |
| Maximum power dissipation(Abs) | 0.2 W | 0.2 W | 0.15 W | 0.2 W | 0.15 W | - |
| surface mount | YES | YES | YES | YES | YES | - |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | - |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | - |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | - |
| Nominal transition frequency (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz | - |
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