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5LP01C-TB-E

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size437KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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5LP01C-TB-E Overview

SMALL SIGNAL, FET

5LP01C-TB-E Parametric

Parameter NameAttribute value
MakerSANYO
package instruction,
Reach Compliance Codeunknow
Ordering number : EN6619B
5LP01C
SANYO Semiconductors
DATA SHEET
5LP01C
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
--50
±10
--0.07
--0.28
0.25
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7013A-013
2.9
3
0.1
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
5LP01C-TB-E
5LP01C-TB-H
0.5
Packing Type: TB
Marking
2.5
1.5
LOT No.
LOT No.
0.5
1
0.95
2
XB
0.4
TB
1 : Gate
2 : Source
3 : Drain
SANYO : CP
0.3
Electrical Connection
3
0.05
1.1
1
2
http://semicon.sanyo.com/en/network
62712 TKIM/33006PE MSIM TB-00002201/92500 TS IM TA-2036 No.6619-1/7

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