S9012G datasheet, PDF - EEWORLD Datasheet

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S9012G: Description500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size134KB，1 Pages; ManufacturerMicro Commercial Components (MCC)

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S9012G Overview

500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

S9012G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micro Commercial Components (MCC)
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	112
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

S9012

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 0.625Watts(Tamb=25

C) of Power Dissipation.

Collector-current 0.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

C to +150

Marking Code: S9012

PNP Silicon

Transistors

TO-92

Pin Configuration

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

Parameter

Collector-Base Breakdown Voltage

=100uAdc, I

=0)

Collector-Emitter Breakdown Voltage

=0.1mAdc, I

=0)

Emitter-Base Breakdown Voltage

=100uAdc, I

=0)

Collector Cutoff Current

=40Vdc, I

=0)

Collector Cutoff Current

=20Vdc, I

=0)

Emitter Cutoff Current

=5.0Vdc, I

=0)

DC Current Gain

=50mAdc, V

=1.0Vdc)

DC Current Gain

=500mAdc, V

=1.0Vdc)

Collector-Emitter Saturation Voltage

=500mAdc, I

=50mAdc)

Base-Emitter Saturation Voltage

=500mAdc, I

=50mAdc)

Base- Emitter Voltage

=100mAdc)

Transistor Frequency

=20mAdc, V

=6.0Vdc, f=30MHz)

120 -166

144 -220

Min

5.0

---

Max

---

0.1

0.2

0.1

Units

Vdc

uAdc

OFF CHARACTERISTICS

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

ON CHARACTERISTICS

FE(1)

FE(2)

CE(sat)

BE(sat)

---

300

---

0.6

1.2

1.4

---

Vdc

DIM

INCHES

MIN

.170

.550

.010

.130

.010

DIMENSIONS

MIN

4.33

4.30

13.97

0.36

3.30

2.44

SMALL-SIGNAL CHARACTERISTICS

150

---

MHz

CLASSIFICATION OF H

FE (1)

Rank

Range

190 -300

MAX

.190

.590

.020

.160

.104

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

www.mccsemi.com

Revision: 3

2004/07/26

S9012G Related Products

	S9012G	S9012	S9012I	S9012H
Description	500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compli
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	25 V	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	112	40	190	144
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-W3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	WIRE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz

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