S9012 datasheet, PDF - EEWORLD Datasheet

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S9012: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size134KB，1 Pages; ManufacturerMicro Commercial Components (MCC)

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S9012 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

S9012 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micro Commercial Components (MCC)
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

S9012

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 0.625Watts(Tamb=25

O

C) of Power Dissipation.

Collector-current 0.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

O

C to +150

O

C

Marking Code: S9012

PNP Silicon

Transistors

TO-92

A

E

Pin Configuration

C

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

Collector-Emitter Breakdown Voltage

(I

C

=0.1mAdc, I

B

=0)

Emitter-Base Breakdown Voltage

(I

E

=100uAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=40Vdc, I

E

=0)

Collector Cutoff Current

(V

CE

=20Vdc, I

B

=0)

Emitter Cutoff Current

(V

EB

=5.0Vdc, I

C

=0)

DC Current Gain

(I

C

=50mAdc, V

CE

=1.0Vdc)

DC Current Gain

(I

C

=500mAdc, V

CE

=1.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=500mAdc, I

B

=50mAdc)

Base-Emitter Saturation Voltage

(I

C

=500mAdc, I

B

=50mAdc)

Base- Emitter Voltage

(I

E

=100mAdc)

Transistor Frequency

(I

C

=20mAdc, V

CE

=6.0Vdc, f=30MHz)

G

120 -166

H

144 -220

Min

40

25

5.0

---

Max

---

0.1

0.2

0.1

Units

Vdc

uAdc

D

BE

B

OFF CHARACTERISTICS

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

C

ON CHARACTERISTICS

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

V

EB

64

40

---

300

---

0.6

1.2

1.4

---

Vdc

DIM

A

B

C

D

E

G

INCHES

MIN

.170

.550

.010

.130

.010

G

DIMENSIONS

MM

MIN

4.33

4.30

13.97

0.36

3.30

2.44

SMALL-SIGNAL CHARACTERISTICS

f

T

150

---

MHz

CLASSIFICATION OF H

FE (1)

Rank

Range

I

190 -300

MAX

.190

.590

.020

.160

.104

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

www.mccsemi.com

Revision: 3

2004/07/26

S9012 Related Products

	S9012	S9012I	S9012G	S9012H
Description	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compli
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	25 V	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	190	112	144
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	WIRE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz

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