DRA4114T datasheet, PDF - EEWORLD Datasheet

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DRA4114T: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, NS-B1-B, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size197KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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DRA4114T Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, NS-B1-B, 3 PIN

DRA4114T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Panasonic
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	160
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

DRA4114T Preview

This product complies with the RoHS Directive (EU 2002/95/EC).

DRA4114T

(Tentative)

Silicon PNP epitaxial planar type

For digital circuits



Packaging

Radial type: 5000 pcs / carton



Package



Code

NS-B1-B



Name

1: Emitter

2: Collector

3: Base



Absolute Maximum Ratings

= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

Rating

–50

–100

300

150

–55 to +150

Unit

°C



Marking Symbol: LD



Internal Connection

Resistance value

kΩ



Electrical Characteristics

= 25°C±3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Input voltage (ON)

Input voltage (OFF)

Input resistance

Symbol

CBO

CEO

CBO

CEO

EBO

CE(sat)

I(on)

I(off)

Conditions

= –10 µA, I

= 0

= –2 mA, I

= 0

= –50 V, I

= 0

= –50 V, I

= 0

= –6 V, I

= 0

= –10 V, I

= –5 mA

= –10 mA, I

= – 0.5 mA

= – 0.2 V, I

= –5 mA

= –5 V, I

= –100 µA

–30%

–1.2

– 0.4

+30%

160

Min

–50

– 0.1

– 0.5

– 0.01

460

– 0.25

Typ

Max

Unit

µA



kΩ

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: November 2009

ZJH00451AED

This product complies with the RoHS Directive (EU 2002/95/EC).

DRA4114T

NS-B1-B

Unit: mm

4.0

±0.2

2.0

±0.2

3.0

±0.2

15.6

±0.5

7.6

0.45

−0.10

+0.20

(0.8)

0.75 max.

(0.8)

(2.5)

0.45

−0.10

0.7

±0.1

+0.20

ZJH00451AED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)

If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–

Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–

Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

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20080805

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