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W5334MK200

Description
Rectifier Diode, 1 Phase, 1 Element, 5334A, 2000V V(RRM), Silicon, CERAMIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size340KB,9 Pages
ManufacturerIXYS
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W5334MK200 Overview

Rectifier Diode, 1 Phase, 1 Element, 5334A, 2000V V(RRM), Silicon, CERAMIC PACKAGE-2

W5334MK200 Parametric

Parameter NameAttribute value
MakerIXYS
package instructionCERAMIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current51500 A
Number of components1
Phase1
Number of terminals2
Maximum output current5334 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
Maximum reverse recovery time34 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
WESTCODE
An
Date:- 10 Oct, 2006
Data Sheet Issue:- 1
IXYS
Company
Provisional Data
Wespack
Rectifier Diode
Types W5334MK200-W5334MK220
Previous Type No.: W4987MK200-220
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2000-2200
2100-2300
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)M
I
F(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
MAXIMUM
LIMITS
5334
3934
2216
9651
8185
46.8
51.5
10.95×10
13.26×10
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
°C
°C
2
2
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 3)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=60%V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=60%V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Operating temperature range
Storage temperature range
2
2
-40 to +180
-55 to +180
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 180°C T
j
initial.
Provisional Data Sheet. Types W5334MK200 to W5334MK220 Issue 1
Page 1 of 9
October, 2006

W5334MK200 Related Products

W5334MK200 W5334MK220
Description Rectifier Diode, 1 Phase, 1 Element, 5334A, 2000V V(RRM), Silicon, CERAMIC PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 5334A, 2200V V(RRM), Silicon, CERAMIC PACKAGE-2
Maker IXYS IXYS
package instruction CERAMIC PACKAGE-2 CERAMIC PACKAGE-2
Contacts 2 2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 51500 A 51500 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum output current 5334 A 5334 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 2000 V 2200 V
Maximum reverse recovery time 34 µs 34 µs
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location END END
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