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MT9HTF12872RHY-800E1

Description
DDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200
Categorystorage    storage   
File Size405KB,14 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
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MT9HTF12872RHY-800E1 Overview

DDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200

MT9HTF12872RHY-800E1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeSODIMM
package instructionDIMM, DIMM200,24
Contacts200
Reach Compliance Codecompliant
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Maximum access time0.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
JESD-30 codeR-XZMA-N200
JESD-609 codee4
memory density9663676416 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM200,24
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.063 A
Maximum slew rate3.015 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal pitch0.6 mm
Terminal locationZIG-ZAG
Maximum time at peak reflow temperature30

MT9HTF12872RHY-800E1 Related Products

MT9HTF12872RHY-800E1 MT9HTF6472RHY-53EE1 MT9HTF12872RHY-53EE1 MT9HTF6472RHY-667E1 MT9HTF12872RHY-80EE1 MT9HTF6472RHY-800E1 MT9HTF6472RHY-80EE1
Description DDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200 DDR DRAM Module, 64MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200 DDR DRAM Module, 128MX72, 0.5ns, CMOS, LEAD FREE, MO-274, SORDIMM-200 DDR DRAM Module, 64MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200 DDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200 DDR DRAM Module, 64MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200 DDR DRAM Module, 64MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code SODIMM SODIMM SODIMM SODIMM SODIMM SODIMM SODIMM
package instruction DIMM, DIMM200,24 LEAD FREE, MO-274, SORDIMM-200 DIMM, DIMM200,24 DIMM, DIMM, DIMM200,24 DIMM, DIMM,
Contacts 200 200 200 200 200 200 200
Reach Compliance Code compliant compliant unknown compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XZMA-N200 R-XZMA-N200 R-XZMA-N200 R-XZMA-N200 R-XZMA-N200 R-XZMA-N200 R-XZMA-N200
JESD-609 code e4 e4 e4 e4 e4 e4 e4
memory density 9663676416 bit 4831838208 bit 9663676416 bit 4831838208 bit 9663676416 bit 4831838208 bit 4831838208 bi
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
memory width 72 72 72 72 72 72 72
Number of functions 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1
Number of terminals 200 200 200 200 200 200 200
word count 134217728 words 67108864 words 134217728 words 67108864 words 134217728 words 67108864 words 67108864 words
character code 128000000 64000000 128000000 64000000 128000000 64000000 64000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 128MX72 64MX72 128MX72 64MX72 128MX72 64MX72 64MX72
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM DIMM
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
self refresh YES YES YES YES YES YES YES
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au)
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location ZIG-ZAG ZIG-ZAG ZIG-ZAG ZIG-ZAG ZIG-ZAG ZIG-ZAG ZIG-ZAG
Maximum time at peak reflow temperature 30 30 30 30 30 30 30
Is it lead-free? Lead free Lead free - Lead free Lead free Lead free Lead free
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