MT9HTF12872RHY-80EE1 datasheet, PDF

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MT9HTF12872RHY-80EE1: DescriptionDDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200; Categorystorage storage; File Size405KB，14 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT9HTF12872RHY-80EE1 Overview

DDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200

MT9HTF12872RHY-80EE1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	SODIMM
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
JESD-30 code	R-XZMA-N200
JESD-609 code	e4
memory density	9663676416 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	200
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.063 A
Maximum slew rate	3.015 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	30

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Description	DDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200	DDR DRAM Module, 64MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200	DDR DRAM Module, 128MX72, 0.5ns, CMOS, LEAD FREE, MO-274, SORDIMM-200	DDR DRAM Module, 64MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200	DDR DRAM Module, 64MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200	DDR DRAM Module, 128MX72, 0.4ns, CMOS, LEAD FREE, MO-274, SORDIMM-200	DDR DRAM Module, 64MX72, CMOS, LEAD FREE, MO-274, SORDIMM-200
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
Parts packaging code	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM
package instruction	DIMM, DIMM200,24	LEAD FREE, MO-274, SORDIMM-200	DIMM, DIMM200,24	DIMM,	DIMM,	DIMM, DIMM200,24	DIMM,
Contacts	200	200	200	200	200	200	200
Reach Compliance Code	compliant	compliant	unknown	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200
JESD-609 code	e4	e4	e4	e4	e4	e4	e4
memory density	9663676416 bit	4831838208 bit	9663676416 bit	4831838208 bit	4831838208 bit	9663676416 bit	4831838208 bi
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1
Number of terminals	200	200	200	200	200	200	200
word count	134217728 words	67108864 words	134217728 words	67108864 words	67108864 words	134217728 words	67108864 words
character code	128000000	64000000	128000000	64000000	64000000	128000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128MX72	64MX72	128MX72	64MX72	64MX72	128MX72	64MX72
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG
Maximum time at peak reflow temperature	30	30	30	30	30	30	30
Is it lead-free?	Lead free	Lead free	-	Lead free	Lead free	Lead free	Lead free

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