MPSH10 datasheet, PDF - EEWORLD Datasheet

MPSH10: DescriptionUHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size288KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	0.7 pF
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	650 MHz
VCEsat-Max	0.5 V

	MPSH10	MMBTH10
Description	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92	Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
Is it Rohs certified?	incompatible	incompatible
Maker	Texas Instruments	Texas Instruments
package instruction	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.05 A	0.05 A
Collector-based maximum capacity	0.7 pF	0.7 pF
Collector-emitter maximum voltage	25 V	25 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	60
JEDEC-95 code	TO-92	TO-236AB
JESD-30 code	O-PBCY-T3	R-PDSO-G3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR
Package form	CYLINDRICAL	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.35 W	0.225 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	BOTTOM	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	650 MHz	650 MHz
VCEsat-Max	0.5 V	0.5 V

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