MMBTH10 datasheet, PDF - EEWORLD Datasheet

MMBTH10: DescriptionSi, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryThe transistor; File Size288KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	0.7 pF
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	650 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

	MMBTH10	MPSH10
Description	Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
Is it Rohs certified?	incompatible	incompatible
Maker	Texas Instruments	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.05 A	0.05 A
Collector-based maximum capacity	0.7 pF	0.7 pF
Collector-emitter maximum voltage	25 V	25 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	60
JEDEC-95 code	TO-236AB	TO-92
JESD-30 code	R-PDSO-G3	O-PBCY-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.225 W	0.35 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	DUAL	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	650 MHz	650 MHz
VCEsat-Max	0.5 V	0.5 V

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