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HER605

Description
6 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size244KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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HER605 Overview

6 A, SILICON, RECTIFIER DIODE

HER601-HER608
High Efficiency Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO-27
Mechanical Data
Case:JEDEC
DO-27,molded
plastic
Polarity: Color band denotes cathode
Weight:
0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
601
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
HER HER HER HER HER HER HER
UNITS
602 603 604 605 606 607 608
100
70
100
200
140
200
300
210
300
6.0
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
200.0
A
Maximum instantaneous forw ard voltage
@ 6.0A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.0
1.3
10.0
200.0
60
100
12
- 55 ---- + 150
- 55 ---- + 150
1.7
V
A
75
65
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn

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HER605 HER601 HER602 HER603 HER604 HER606 HER607 HER608
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