DSA60C45HB
preliminary
Schottky Diode Gen ²
V
RRM
I
FAV
V
F
=
= 2x
=
45 V
30 A
0.66 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA60C45HB
Backside: cathode
1
2
3
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
TO-247
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131030a
© 2013 IXYS all rights reserved
DSA60C45HB
preliminary
Schottky
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
45 V
45 V
30 A
60 A
30 A
60 A
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.42
5.9
0.95
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
=
I
AS
=
5 V f = 1 MHz
15 A L = 180 µH
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
980
20.3
1.5
160
550
V
mΩ
K/W
K/W
W
A
pF
mJ
A
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
min.
typ.
max. non-repetitive reverse blocking voltage
max.
45
45
450
5
0.77
0.96
0.66
0.84
30
Unit
V
V
µA
mA
V
V
V
V
A
V
R
=
V
R
=
I
F
=
I
F
=
I
F
=
I
F
=
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
E
AS
I
AR
average forward current
T
C
= 155°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
V
A
= 1.5·V
R
typ.: f = 10 kHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131030a
© 2013 IXYS all rights reserved
DSA60C45HB
preliminary
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
50
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
6
0.8
20
1.2
120
Product Marking
Part number
D
S
A
60
C
45
HB
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Part Number
DSA60C45HB
Marking on Product
DSA60C45HB
Delivery Mode
Tube
Quantity
30
Code No.
503755
Similar Part
DSA60C45PB
Package
TO-220AB (3)
Voltage class
45
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Schottky
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.42
3.3
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131030a
© 2013 IXYS all rights reserved
DSA60C45HB
preliminary
Outlines TO-247
E
Q
A
A2
S
D1
D
2x
E2
Ø
P
Ø
P1
D2
Sym.
Inches
min.
max.
Millimeter
min.
max.
4
1
L1
L
2
3
E1
2x
b2
b4
2x
e
3x
b
C
A1
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
-
0.020 0.053
0.530
-
-
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
-
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
-
7.39
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131030a
© 2013 IXYS all rights reserved
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