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BD525

Description
TRANSISTOR,BJT,NPN,60V V(BR)CEO,2A I(C),SIP-TAB
CategoryDiscrete semiconductor    The transistor   
File Size154KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BD525 Overview

TRANSISTOR,BJT,NPN,60V V(BR)CEO,2A I(C),SIP-TAB

BD525 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)60
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)150 MHz

BD525 Related Products

BD525 BD527
Description TRANSISTOR,BJT,NPN,60V V(BR)CEO,2A I(C),SIP-TAB TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),SIP-TAB
Is it Rohs certified? incompatible incompatible
Maker NXP NXP
Reach Compliance Code unknown unknown
Maximum collector current (IC) 2 A 2 A
Configuration Single Single
Minimum DC current gain (hFE) 60 60
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1 W 1 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 150 MHz 150 MHz
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