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GS81302T38GE-300IT

Description
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Categorystorage    storage   
File Size455KB,32 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
Download Datasheet Parametric View All

GS81302T38GE-300IT Overview

DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS81302T38GE-300IT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instruction15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density75497472 bit
Memory IC TypeDDR SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
Preliminary
GS81302T06/11/20/38E-450/400/375/333/300
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.5 Clock Latency
• Simultaneous Read and Write SigmaDDR
TM
Interface
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• On-Die Termination (ODT) on Data (D), Byte Write (BW),
and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaDDR
TM
-II+
Burst of 2 SRAM
450 MHz–300 MHz
1.8 V V
DD
1.8 V or 1.5 V I/O
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
SigmaDDR-II™ Family Overview
The GS81302T06/11/20/38E are built in compliance with the
SigmaDDR-II+ SRAM pinout standard for Common I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302T06/11/20/38E SigmaDDR-II+
SRAMs are just one element in a family of low power, low
voltage HSTL I/O SRAMs designed to operate at the speeds
needed to implement economical high performance
networking systems.
Clocking and Addressing Schemes
The GS81302T06/11/20/38E SigmaDDR-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Because Common I/O SigmaDDR-II+ RAMs always transfer
data in two packets, A0 is internally set to 0 for the first read
or write transfer, and automatically incremented by 1 for the
next transfer. Because the LSB is tied off internally, the
address field of a SigmaDDR-II+ B2 RAM is always one
address pin less than the advertised index depth (e.g., the 8M x
18 has a 4M addressable index).
Parameter Synopsis
-450
tKHKH
tKHQV
2.2 ns
0.37 ns
-400
2.5 ns
0.45 ns
-375
2.66 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
Rev: 1.01a 6/2010
1/32
© 2009, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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