Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | IXYS |
| Parts packaging code | TO-247AD |
| package instruction | PLASTIC PACKAGE-3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 700 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 900 V |
| Maximum drain current (Abs) (ID) | 7 A |
| Maximum drain current (ID) | 7 A |
| Maximum drain-source on-resistance | 1.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-247AD |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 180 W |
| Maximum pulsed drain current (IDM) | 28 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IXFH7N90Q | IXFT7N90Q | |
|---|---|---|
| Description | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN |
| Is it lead-free? | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to |
| Maker | IXYS | IXYS |
| Parts packaging code | TO-247AD | TO-268AA |
| package instruction | PLASTIC PACKAGE-3 | PLASTIC, TO-268, 3 PIN |
| Contacts | 3 | 4 |
| Reach Compliance Code | compliant | not_compliant |
| Other features | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 700 mJ | 700 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 900 V | 900 V |
| Maximum drain current (Abs) (ID) | 7 A | 7 A |
| Maximum drain current (ID) | 7 A | 7 A |
| Maximum drain-source on-resistance | 1.5 Ω | 1.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-247AD | TO-268AA |
| JESD-30 code | R-PSFM-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 180 W | 180 W |
| Maximum pulsed drain current (IDM) | 28 A | 28 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | YES |
| Terminal form | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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