MMBTA56 datasheet, PDF - EEWORLD Datasheet

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MMBTA56: DescriptionBipolar transistor, 80V, 0.5A, 50MHZ, -55-150℃; CategoryDiscrete semiconductor Bipolar transistor; File Size519KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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MMBTA56 Overview

Bipolar transistor, 80V, 0.5A, 50MHZ, -55-150℃

MMBTA56 Parametric

Parameter Name	Attribute value
polarity	PNP
Collector-emitter breakdown voltage	80
Collector Current - Continuous	0.5
DC current gain - Min	100
DC current gain - Max
Transition frequency	50
Package	SOT-23
Storage Temperature Range	-55-150
class	Transistors

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MMBTA55/A56

PNP General Purpose Transistor

1. BASE

2. EMITTER

3. COLLECTOR

FEATURES

Epitaxial planar die construction.

Complementary NPN types available

(MMBTA05/MMBTA06).

SOT-23

Dim

Min

2.70

1.10

Max

3.10

1.50

1.0 Typical

0.4 Typical

0.35

1.80

0.02

2.20

0.48

2.00

0.1

2.60

0.1 Typical

APPLICATIONS

Ideal for medium NPN amplification and switching.

All Dimensions in mm

ORDERING INFORMATION

Type No.

MMBTA55

MMBTA56

Marking

2GM

Package Code

SOT-23

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

CEO

EBO

θJA

stg

Parameter

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

Collector dissipation

Thermal Resistance, Junction to Ambient

junction and storage temperature

MMBTA55

-60

-4

-0.5

0.3

417

-55 to +150

MMBTA56

-80

UNIT

°C/W

°C

Revision:20170701-P1

www.lgesemi

mail:lge@lgesemi.com

MMBTA56 Related Products

	MMBTA56	MMBTA55
Description	Bipolar transistor, 80V, 0.5A, 50MHZ, -55-150℃	Bipolar transistor, 60V, 0.5A, 50MHZ, -55-150℃
polarity	PNP	PNP
Collector-emitter breakdown voltage	80	60
Collector Current - Continuous	0.5	0.5
DC current gain - Min	100	100
Transition frequency	50	50
Package	SOT-23	SOT-23
Storage Temperature Range	-55-150	-55-150
class	Transistors	Transistors

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