MMBTA55 datasheet, PDF - EEWORLD Datasheet

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MMBTA55: DescriptionBipolar transistor, 60V, 0.5A, 50MHZ, -55-150℃; CategoryDiscrete semiconductor Bipolar transistor; File Size519KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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MMBTA55 Overview

Bipolar transistor, 60V, 0.5A, 50MHZ, -55-150℃

MMBTA55 Parametric

Parameter Name	Attribute value
polarity	PNP
Collector-emitter breakdown voltage	60
Collector Current - Continuous	0.5
DC current gain - Min	100
DC current gain - Max
Transition frequency	50
Package	SOT-23
Storage Temperature Range	-55-150
class	Transistors

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MMBTA55/A56

PNP General Purpose Transistor

1. BASE

2. EMITTER

3. COLLECTOR

A

FEATURES

Epitaxial planar die construction.

Complementary NPN types available

(MMBTA05/MMBTA06).

D

K

SOT-23

Dim

E

B

Min

2.70

1.10

Max

3.10

1.50

A

B

C

D

J

1.0 Typical

0.4 Typical

0.35

1.80

0.02

2.20

0.48

2.00

0.1

2.60

E

G

H

J

G

H

0.1 Typical

C

K

APPLICATIONS

Ideal for medium NPN amplification and switching.

All Dimensions in mm

ORDERING INFORMATION

Type No.

MMBTA55

MMBTA56

Marking

2H

2GM

Package Code

SOT-23

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

j

,T

stg

Parameter

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

Collector dissipation

Thermal Resistance, Junction to Ambient

junction and storage temperature

MMBTA55

-60

-4

-0.5

0.3

417

-55 to +150

MMBTA56

-80

UNIT

V

A

W

°C/W

°C

ht

t

p

:

//

Revision:20170701-P1

www.lgesemi

.c

o

m

mail:lge@lgesemi.com

MMBTA55 Related Products

	MMBTA55	MMBTA56
Description	Bipolar transistor, 60V, 0.5A, 50MHZ, -55-150℃	Bipolar transistor, 80V, 0.5A, 50MHZ, -55-150℃
polarity	PNP	PNP
Collector-emitter breakdown voltage	60	80
Collector Current - Continuous	0.5	0.5
DC current gain - Min	100	100
Transition frequency	50	50
Package	SOT-23	SOT-23
Storage Temperature Range	-55-150	-55-150
class	Transistors	Transistors

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