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LPM9029C

Description
Super high density cell design
File Size326KB,5 Pages
ManufacturerLowPower Semiconductor ( LPS)
Websitehttp://www.lowpowersemi.com/html/EN/ABOUT/
Download Datasheet View All

LPM9029C Overview

Super high density cell design

Preliminary Datasheet
LPM9029C
N and P-Channel Enhancement Power MOSFET
General Description
The LPM9029C integrates N-Channel and P-Channel
enhancement MOSFET Transistor. It uses advanced
trench technology and design to provide excellent
R
DS (ON)
with low gate charge. This device is suitable
for using in DC-DC conversion, power switch and
charging circuit.
Standard Product LPM9029C is
Pb-free and Halogen-free.
PMOS:
V
PDS
=-20V, I
PD
=-4.5A
R
PDS(ON)
< 95mΩ @ V
GS
=-2.5V
R
PDS(ON)
< 60mΩ @ V
GS
=-4.5V
Super high density cell design
Extremely Low Threshold Voltage
Small package SOP-8
Features
Trench Technology
NMOS:
V
NDS
=30V, I
ND
=12A
R
NDS(ON)
< 40mΩ @ V
GS
=2.5V
R
NDS(ON)
< 20mΩ @ V
GS
=4.5V
Ordering Information
LPM9029C□
F: Pb-Free
Package Type
SO: SOP-8
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin Configurations
S
NMOS
G
NMOS
S
PMOS
G
PMOS
1
LPM9029C
2
3
4
SOP-8
TOP VIEW
8
7
6
5
D
NMOS
Marking Information
D
NMOS
Device
D
PMOS
D
PMOS
Marking
Package
SOP-8
Shipping
3K/REEL
LPM9029C
Pin Description
Pin Number
1
2
3
4
5,6
7,8
LPM9029C
May.-2014
Email:
marketing@lowpowersemi.com
www.lowpowersemi.com
Pin Description
Source Of NMOS
Gate Of NMOS
Source Of PMOS
Gate Of PMOS
Drain Of PMOS
Drain Of NMOS
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