NAND04GW4B2CN6E datasheet, PDF

NAND04GW4B2CN6E: DescriptionFlash, 256MX16, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48; Categorystorage storage; File Size825KB，57 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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NAND04GW4B2CN6E Overview

Flash, 256MX16, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	TSOP
package instruction	TSSOP,
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
JESD-30 code	R-PDSO-G48
JESD-609 code	e3
length	18.4 mm
memory density	4294967296 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	268435456 words
character code	256000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	12 mm

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