SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Parameter Name | Attribute value |
Brand Name | Integrated Device Technology |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | IDT (Integrated Device Technology) |
Parts packaging code | CABGA |
package instruction | TFBGA, BGA48,6X8,30 |
Contacts | 48 |
Manufacturer packaging code | BE48 |
Reach Compliance Code | not_compliant |
ECCN code | 3A991.B.2.A |
Samacsys Description | CHIP ARAY BGA 9.0 X 9.0 X MM X 0.75 PITC |
Maximum access time | 10 ns |
I/O type | COMMON |
JESD-30 code | S-PBGA-B48 |
JESD-609 code | e0 |
length | 9 mm |
memory density | 4194304 bit |
Memory IC Type | STANDARD SRAM |
memory width | 16 |
Humidity sensitivity level | 4 |
Number of functions | 1 |
Number of terminals | 48 |
word count | 262144 words |
character code | 256000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 256KX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA48,6X8,30 |
Package shape | SQUARE |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 3.3 V |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
Maximum standby current | 0.01 A |
Minimum standby current | 3 V |
Maximum slew rate | 0.18 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn63Pb37) |
Terminal form | BALL |
Terminal pitch | 0.75 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 20 |
width | 9 mm |
Base Number Matches | 1 |