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2SB1008/A

Description
Power Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size76KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SB1008/A Overview

Power Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

2SB1008/A Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
Shell connectionISOLATED
Maximum collector current (IC)2 A
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment10 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max1.5 V
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