WS512K8-100CI datasheet, PDF - EEWORLD Datasheet

WS512K8-100CI: DescriptionSRAM Module, 512KX8, 100ns, CMOS, CDIP32, 0.600 INCH, DUAL CAVITY, HERMETIC SEALED, BOTTOM BRAZED, CERAMIC, DIP-32; Categorystorage storage; File Size120KB，5 Pages; ManufacturerMercury Systems Inc

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WS512K8-100CI Overview

SRAM Module, 512KX8, 100ns, CMOS, CDIP32, 0.600 INCH, DUAL CAVITY, HERMETIC SEALED, BOTTOM BRAZED, CERAMIC, DIP-32

Parameter Name	Attribute value
Maker	Mercury Systems Inc
package instruction	DIP,
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	100 ns
JESD-30 code	R-CDIP-T32
length	40.6 mm
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm

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