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SXVP1120N2

Description
Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
CategoryDiscrete semiconductor    The transistor   
File Size118KB,4 Pages
ManufacturerSupertex
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SXVP1120N2 Overview

Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

SXVP1120N2 Parametric

Parameter NameAttribute value
MakerSupertex
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH INPUT IMPEDANCE, HIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)0.8 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)25 pF
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON

SXVP1120N2 Related Products

SXVP1120N2 SXVP1116N2 SCVP1116N2 SCVP1120N2 SJVP1116N2 SXVVP1116N2 SXVVP1120N2 SJVP1120N2
Description Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH INPUT IMPEDANCE, HIGH RELIABILITY HIGH INPUT IMPEDANCE, HIGH RELIABILITY HIGH INPUT IMPEDANCE, HIGH RELIABILITY HIGH INPUT IMPEDANCE, HIGH RELIABILITY HIGH INPUT IMPEDANCE, HIGH RELIABILITY HIGH INPUT IMPEDANCE, HIGH RELIABILITY HIGH INPUT IMPEDANCE, HIGH RELIABILITY HIGH INPUT IMPEDANCE, HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 160 V 160 V 200 V 160 V 160 V 200 V 200 V
Maximum drain current (ID) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Maximum drain-source on-resistance 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 25 pF 25 pF 25 pF 25 pF 25 pF 25 pF 25 pF 25 pF
JEDEC-95 code TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker Supertex - - - Supertex Supertex Supertex Supertex
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