SCVP1116N2 datasheet, PDF - EEWORLD Datasheet

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SCVP1116N2: DescriptionSmall Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39; CategoryDiscrete semiconductor The transistor; File Size118KB，4 Pages; ManufacturerSupertex

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SCVP1116N2 Overview

Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

SCVP1116N2 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH INPUT IMPEDANCE, HIGH RELIABILITY
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	160 V
Maximum drain current (ID)	0.8 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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SCVP1116N2 Related Products

	SCVP1116N2	SXVP1116N2	SCVP1120N2	SJVP1116N2	SXVVP1116N2	SXVVP1120N2	SXVP1120N2	SJVP1120N2
Description	Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH INPUT IMPEDANCE, HIGH RELIABILITY	HIGH INPUT IMPEDANCE, HIGH RELIABILITY	HIGH INPUT IMPEDANCE, HIGH RELIABILITY	HIGH INPUT IMPEDANCE, HIGH RELIABILITY	HIGH INPUT IMPEDANCE, HIGH RELIABILITY	HIGH INPUT IMPEDANCE, HIGH RELIABILITY	HIGH INPUT IMPEDANCE, HIGH RELIABILITY	HIGH INPUT IMPEDANCE, HIGH RELIABILITY
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	160 V	160 V	200 V	160 V	160 V	200 V	200 V	200 V
Maximum drain current (ID)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Maximum drain-source on-resistance	5 Ω	5 Ω	5 Ω	5 Ω	5 Ω	5 Ω	5 Ω	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF	25 pF	25 pF	25 pF	25 pF	25 pF	25 pF	25 pF
JEDEC-95 code	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	-	-	-	Supertex	Supertex	Supertex	Supertex	Supertex

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