7M1001S65CB datasheet, PDF - EEWORLD Datasheet

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7M1001S65CB: DescriptionSB-64, Tube; Categorystorage storage; File Size540KB，11 Pages; ManufacturerIDT (Integrated Device Technology)

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7M1001S65CB Overview

SB-64, Tube

7M1001S65CB Parametric

Parameter Name	Attribute value
Brand Name	Integrated Device Technology
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	SB
package instruction	DIP, DIP64,.6
Contacts	64
Manufacturer packaging code	SB64
Reach Compliance Code	not_compliant
Maximum access time	65 ns
I/O type	COMMON
JESD-30 code	R-CDMA-T64
JESD-609 code	e0
length	81.28 mm
memory density	1048576 bit
Memory IC Type	DUAL-PORT SRAM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of ports	2
Number of terminals	64
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP64,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum seat height	9.652 mm
Maximum standby current	0.245 A
Minimum standby current	4.5 V
Maximum slew rate	1.13 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm

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7M1001S65CB Related Products

	7M1001S65CB	IDT7M1001S30CB	IDT7M1003S30CB	7M1003S50C	7M1003S65C	7M1003S80CB	7M1003S65CB	7M1001S80CB	7M1001S65C	7M1001S50C
Description	SB-64, Tube	Multi-Port SRAM Module, 128KX8, 30ns, CMOS, CDIP64	Multi-Port SRAM Module, 64KX8, 30ns, CMOS, CDIP64	SB-64, Tube	SB-64, Tube	SB-64, Tube	SB-64, Tube	SB-64, Tube	SB-64, Tube	SB-64, Tube
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
Maximum access time	65 ns	30 ns	30 ns	50 ns	65 ns	80 ns	65 ns	80 ns	65 ns	50 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-CDMA-T64	R-XDIP-T64	R-XDIP-T64	R-CDMA-T64	R-CDMA-T64	R-CDMA-T64	R-CDMA-T64	R-CDMA-T64	R-CDMA-T64	R-CDMA-T64
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	1048576 bit	1048576 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	DUAL-PORT SRAM	MULTI-PORT SRAM MODULE	MULTI-PORT SRAM MODULE	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
memory width	8	8	8	8	8	8	8	8	8	8
Number of ports	2	2	2	2	2	2	2	2	2	2
Number of terminals	64	64	64	64	64	64	64	64	64	64
word count	131072 words	131072 words	65536 words	65536 words	65536 words	65536 words	65536 words	131072 words	131072 words	131072 words
character code	128000	128000	64000	64000	64000	64000	64000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	70 °C	70 °C	125 °C	125 °C	125 °C	70 °C	70 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-	-	-55 °C	-55 °C	-55 °C	-	-
organize	128KX8	128KX8	64KX8	64KX8	64KX8	64KX8	64KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC	CERAMIC	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP64,.6	DIP64,.6	DIP64,.6	DIP64,.6	DIP64,.6	DIP64,.6	DIP64,.6	DIP64,.6	DIP64,.6	DIP64,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	IN-LINE	IN-LINE	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	225	225	260	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.245 A	0.245 A	0.125 A	0.065 A	0.065 A	0.125 A	0.125 A	0.245 A	0.125 A	0.125 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	1.13 mA	1.13 mA	0.79 mA	0.66 mA	0.66 mA	0.79 mA	0.79 mA	1.13 mA	0.94 mA	0.94 mA
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	COMMERCIAL	COMMERCIAL	MILITARY	MILITARY	MILITARY	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	30	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Brand Name	Integrated Device Technology	-	-	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology
Maker	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Parts packaging code	SB	-	-	SB	SB	SB	SB	SB	SB	SB
package instruction	DIP, DIP64,.6	-	-	CERAMIC, SIDEBRAZED, DIP-64	CERAMIC, SIDEBRAZED, DIP-64	DIP, DIP64,.6	DIP, DIP64,.6	DIP, DIP64,.6	CERAMIC, SIDEBRAZED, DIP-64	CERAMIC, SIDEBRAZED, DIP-64
Contacts	64	-	-	64	64	64	64	64	64	64
Manufacturer packaging code	SB64	-	-	SB64	SB64	SB64	SB64	SB64	SB64	SB64
length	81.28 mm	-	-	81.28 mm	81.28 mm	81.28 mm	81.28 mm	81.28 mm	81.28 mm	81.28 mm
Humidity sensitivity level	1	-	-	1	1	1	1	1	1	1
Number of functions	1	-	-	1	1	1	1	1	1	1
Filter level	MIL-STD-883 Class B	MIL-STD-883 Class B (Modified)	MIL-STD-883 Class B (Modified)	-	-	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883 Class B	-	-
Maximum seat height	9.652 mm	-	-	9.652 mm	9.652 mm	9.652 mm	9.652 mm	9.652 mm	9.652 mm	9.652 mm
Maximum supply voltage (Vsup)	5.5 V	-	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	-	5 V	5 V	5 V	5 V	5 V	5 V	5 V
width	15.24 mm	-	-	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm

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