MT8VDDT3264HY-335XX datasheet, PDF

MT8VDDT3264HY-335XX: DescriptionDDR DRAM Module, 32MX64, 0.75ns, CMOS, LEAD FREE, SODIMM-200; Categorystorage storage; File Size293KB，15 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT8VDDT3264HY-335XX Overview

DDR DRAM Module, 32MX64, 0.75ns, CMOS, LEAD FREE, SODIMM-200

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	MODULE
package instruction	DIMM,
Contacts	200
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N200
JESD-609 code	e4
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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