2SJ462-T2 datasheet, PDF - EEWORLD Datasheet

2SJ462-T2: Description2500mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, COMPACT PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size171KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SJ462-T2 Overview

2500mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, COMPACT PACKAGE-3

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (ID)	2.5 A
Maximum drain-source on-resistance	0.19 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	2SJ462-T2
Description	2500mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, COMPACT PACKAGE-3
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (ID)	2.5 A
Maximum drain-source on-resistance	0.19 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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