WS1M8-XXX
HI-RELIABILITY PRODUCT
2x512Kx8 DUALITHIC™ SRAM
FEATURES
s
Access Times 17, 20, 25, 35, 45, 55ns
s
Revolutionary, Center Power/Ground Pinout
s
Packaging:
• 32 pin, Hermetic Ceramic DIP (Package 300)
• 36 lead Ceramic SOJ (Package 100)
• 36 lead Ceramic Flatpack (Package 226)
PIN CONFIGURATION FOR WS1M8-XDJX
AND WS1M8-XFX
36 CSOJ
36 FLATPACK
s
Organized as two banks of 512Kx8
s
Commercial, Industrial and Military Temperature Ranges
s
5 Volt Power Supply
s
Low Power CMOS
s
TTL Compatible Inputs and Outputs
PIN CONFIGURATION FOR WS1M8-XCX
32 DIP
TOP VIEW
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
V
CC
I/O5
I/O4
A14
A13
A12
A11
A10
CS2
TOP VIEW
A0
A1
A2
A3
A4
CS1
I/O0
I/O1
V
CC
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE
A13
A8
A9
A11
CS2
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
PIN DESCRIPTION
A
0-18
I/O
0-7
CS
1-2
OE
WE
V
CC
GND
Address Inputs
Data Input/Output
Chip Selects
Output Enable
Write Enable
+5.0V Power
Ground
PIN DESCRIPTION
A
0-18
I/O
0-7
CS
1-2
WE
V
CC
GND
Address Inputs
Data Input/Output
Chip Selects
Write Enable
+5.0V Power
Ground
BLOCK DIAGRAM
I/O
0-7
WE
OE
A
0-18
BLOCK DIAGRAM
I/O
0-7
WE
A
0-18
512K x 8
512K x 8
512K x 8
512K x 8
CS
1
(1)
CS
2
(1)
NOTE:
1. CS
1
and CS
2
are used to select the lower and upper 512Kx8 of the device. CS
1
and CS
2
must not be enabled at the same time.
CS
1
(1)
CS
2
(1)
October 2000 Rev. 4
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS1M8-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
-0.5
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°C
°C
V
°C
V
CS
H
L
L
L
OE
X
L
X
H
X
H
L
H
TRUTH TABLE
WE
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.3
-55
Max
5.5
V
CC
+ 0.3
+0.8
+125
Unit
V
V
V
°C
Parameter
Input capacitance
Output capicitance
CAPACITANCE
(T
A
= +25°C)
Symbol
C
IN
C
OUT
Condition
V
IN
= 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
Max Unit
20
20
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Sym
I
LI
I
LO
I
CC
I
SB
1
1
1
Conditions
Min
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA
I
OH
= -4.0mA
2.4
Max
10
10
180
40
0.4
Units
µA
µA
mA
mA
V
V
V
OL
V
OH
NOTE: DC test conditions: V
IH
= V
CC
-0.3V , V
IL
= 0.3V
1. OE is internally tied to the GND and not accessible on the WS1M8-XCX.
LOW POWER DATA RETENTION CHARACTERISTICS (WS1M8L-XXX ONLY)
(T
A
= -55°C to +125°C)
Parameter
Data Retention Supply Voltage
Data Retention Current
Symbol
V
DR
I
CCDR1
Conditions
Min
CS
≥
V
CC
-0.2V
V
CC
= 3V
2.0
3.0
Typ
Max
5.5
18.0*
V
mA
Units
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2
WS1M8-XXX
AC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
t
RC
t
AA
t
OH
t
ACS
t
OE
2
1
Symbol
Min
17
-17
Max
-20
Min
20
17
20
0
17
9
20
10
2
0
9
9
10
10
2
0
0
Max
Min
25
-25
Max
-35
Min
35
25
0
25
12
4
0
12
12
15
15
35
25
4
0
35
0
Max
-45
Min
45
45
0
45
25
4
0
20
20
Max
-55
Min
55
55
Max
Units
ns
ns
ns
55
25
ns
ns
ns
ns
20
20
ns
ns
0
t
CLZ
2
0
t
OLZ
2
t
CHZ
1
t
OHZ
2
1. This parameter is guaranteed by design but not tested.
2. OE is internally tied to the GND and not accessible on the WS1M8-XCX.
AC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
0
Symbol
-17
Min
17
14
14
9
14
0
0
2
9
0
Max
-20
Min
20
14
14
10
14
0
0
3
9
0
Max
-25
Min
25
15
15
10
15
0
0
4
10
0
Max
Min
35
25
25
20
25
0
0
4
15
0
-35
Max
-45
Min
45
35
35
25
35
0
5
5
15
0
Max
-55
Min
55
50
50
25
40
0
5
5
25
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
I
OL
Current Source
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
D.U.T.
C
eff
= 50 pf
V
Z
≈
1.5V
Output Timing Reference Level
(Bipolar Supply)
I
OH
Current Source
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS1M8-XXX
TIMING WAVEFORM - READ CYCLE
t
RC
ADDRESS
t
AA
CS
t
RC
ADDRESS
t
ACS
t
CLZ
OE
t
CHZ
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
t
OHZ
DATA VALID
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
READ CYCLE 2 (WE = V
IH
)
NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.
WRITE CYCLE - WE CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
CS
t
AH
t
AS
WE
t
WP
t
OW
t
WHZ
t
DW
t
DH
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
t
WC
ADDRESS
WS32K32-XHX
t
AS
t
AW
t
CW
t
AH
CS
t
WP
WE
t
DW
DATA I/O
DATA VALID
t
DH
WRITE CYCLE 2, CS CONTROLLED
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
4
WS1M8-XXX
PACKAGE 100:
36 LEAD, CERAMIC SOJ
23.37 (0.920)
±
0.25 (0.010)
0.20 (0.008)
±
0.05 (0.002)
4.76 (0.184) MAX
0.89 (0.035)
Radius TYP
11.3 (0.446)
±
0.2 (0.009)
9.55 (0.376)
±
0.25 (0.010)
1.27 (0.050)
±
0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
21.59 (0.850) TYP
0.43 (0.017)
±
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 226:
36 LEAD, CERAMIC FLAT PACK
23.37 (0.920)
±
0.25 (0.010)
3.18 (0.125)
MAX
PIN 1
IDENTIFIER
12.95 (0.510)
±
0.13 (0.005)
12.7 (0.500)
±
0.5 (0.020)
5.1 (0.200)
±
0.25 (0.010)
0.43 (0.017)
±
0.05 (0.002)
32.64 (1.285) TYP
1.27 (0.050) TYP
21.59 (0.850) TYP
38.1 (1.50)
±
0.4 (0.015)
3.8 (0.150)
TYP
0.127 (0.005)
±
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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