Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Parameter Name | Attribute value |
Maker | Fairchild |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 200 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 50 V |
Maximum drain current (ID) | 48 A |
Maximum drain-source on-resistance | 0.025 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB |
JESD-30 code | R-PSSO-G2 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 144 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
NDB6050S62Z | NDP6050J69Z | NDB6050L99Z | |
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Description | Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
package instruction | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 200 mJ | 200 mJ | 200 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 50 V | 50 V | 50 V |
Maximum drain current (ID) | 48 A | 48 A | 48 A |
Maximum drain-source on-resistance | 0.025 Ω | 0.025 Ω | 0.025 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB | TO-220AB | TO-263AB |
JESD-30 code | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 |
Number of components | 1 | 1 | 1 |
Number of terminals | 2 | 3 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 144 A | 144 A | 144 A |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | NO | YES |
Terminal form | GULL WING | THROUGH-HOLE | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON |
Maker | Fairchild | - | Fairchild |
Shell connection | DRAIN | - | DRAIN |