MMBT1815G-BL-AQ3-R datasheet, PDF

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Datasheet> All Categories > Discrete semiconductor> The transistor> MMBT1815G-BL-AQ3-R

MMBT1815G-BL-AQ3-R: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size212KB，5 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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MMBT1815G-BL-AQ3-R Overview

Small Signal Bipolar Transistor

MMBT1815G-BL-AQ3-R Parametric

Parameter Name	Attribute value
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	350
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

MMBT1815G-BL-AQ3-R Related Products

	MMBT1815G-BL-AQ3-R	MMBT1815L-BL-AQ3-R	MMBT1815L-Y-AQ3-R	MMBT1815L-GR-AQ3-R	MMBT1815G-GR-AQ3-R	MMBT1815G-Y-AQ3-R
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	350	350	120	200	200	120
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz

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