PJS6834_S2_00001 datasheet, PDF

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PJS6834_S2_00001: DescriptionSmall Signal Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size289KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJS6834_S2_00001 Overview

Small Signal Field-Effect Transistor

PJS6834_S2_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Reach Compliance Code	compliant
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.75 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

PJS6834_S2_00001 Preview

PPJS6834

20V N-Channel Enhancement Mode MOSFET

Voltage

Features



20 V

Current

750mA

SOT-23 6L

Unit: inch(mm)

Low Voltage Drive (1.2V).

Advanced Trench Process Technology

Specially Designed for Switch Load, PWM Application, etc.

ESD Protected

Lead free in compliance with EU RoHS 2011/65/EU

directive.



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-23 6L Package



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.0005 ounces, 0.0141 grams



Marking: SG4

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

(Note 4)

SYMBOL

=25

Derate above 25

STG

θJA

LIMIT

UNITS

mW/

+10

750

1500

500

-55~150

100

Operating Junction and Storage Temperature Range

Typical Thermal resistance

Junction to Ambient

(Note 3)

C/W

May 19,2016-REV.01

Page 1

PPJS6834

Electrical Characteristics

=25 C unless otherwise noted)

PARAMETER

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

DSS

GS(th)

=0V, I

=250uA

, I

=250uA

=4.5V, I

=600mA

=2.5V, I

=200mA

Drain-Source On-State Resistance

DS(on)

=1.8V, I

=100mA

=1.5V, I

=50mA

=1.2V, I

=20mA

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Dynamic

(Note 5)

SYMBOL

TEST CONDITION

MIN.

0.3

TYP.

0.65

280

350

400

500

1000

+0.5

1.4

0.22

0.21

2.8

MAX.

0.9

400

650

800

1200

3000

+10

UNITS

mΩ

DSS

GSS

Ciss

Coss

Crss

(on)

(off)

=16V, V

=0V

=+8V, V

=0V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

Diode Forward Voltage

=10V, I

=600mA,

=4.5V

(Note 1,2)

=10V, V

=0V,

f=1.0MHZ

=10V, I

=150mA,

=4.0V,

=10Ω

(Note 1,2)

---

=500mA, V

=0V

0.87

500

1.3

NOTES :

1. Pulse width<300us, Duty cycle<2%

2. Essentially independent of operating temperature typical characteristics.

3. R

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.

4. The maximum current rating is package limited.

5. Guaranteed by design, not subject to production testing.

May 19,2016-REV.01

Page 2

PPJS6834

TYPICAL CHARACTERISTIC CURVES

Fig.1 On-Region Characteristics

Fig.2 Transfer Characteristics

Fig.3 On-Resistance vs. Drain Current

Fig.4 On-Resistance vs. Junction temperature

Fig.5 On-Resistance Variation with VGS.

Fig.6 Body Diode Characteristics

May 19,2016-REV.01

Page 3

PPJS6834

TYPICAL CHARACTERISTIC CURVES

Fig.7 Gate-Charge Characteristics

Fig.8 Threshold Voltage Variation with Temperature.

Fig.9 Capacitance vs. Drain-Source Voltage.

May 19,2016-REV.01

Page 4

PPJS6834

PART NO PACKING CODE VERSION

PART NO PACKING CODE

Package Type

SOT-23 6L

Packing type

3K pcs / 7” reel

10K pcs / 13” reel

Marking

SG4

Version

Halogen free

PJS6834_S1_00001

PJS6834_S2_00001

MOUNTING PAD LAYOUT

May 19,2016-REV.01

Page 5

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