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Datasheet> All Categories > storage> storage> K4S511533C-YN80
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K4S511533C-YN80

Description
Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54
Categorystorage    storage   
File Size117KB，8 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4S511533C-YN80 Overview

Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54

K4S511533C-YN80 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionLFBGA, BGA54,9X9,32
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B54
JESD-609 codee0
length15.5 mm
memory density536870912 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals54
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize32MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA54,9X9,32
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.3 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.19 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width9.5 mm

K4S511533C-YN80 Related Products

K4S511533C-YN80 K4S511533C-YL1L K4S511533C-YL1H K4S511533C-YN1H K4S511533C-YP1L K4S511533C-YP1H K4S511533C-YN1L K4S511533C-YP80 K4S511533C-YL80
Description Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54 Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54 Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code BGA BGA BGA BGA BGA BGA BGA BGA BGA
package instruction LFBGA, BGA54,9X9,32 LFBGA, BGA54,9X9,32 LFBGA, BGA54,9X9,32 LFBGA, BGA54,9X9,32 LFBGA, BGA54,9X9,32 LFBGA, BGA54,9X9,32 LFBGA, BGA54,9X9,32 LFBGA, BGA54,9X9,32 LFBGA, BGA54,9X9,32
Contacts 54 54 54 54 54 54 54 54 54
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 7 ns 7 ns 7 ns 7 ns 7 ns 7 ns 6 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 125 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 125 MHz 125 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 code R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54 R-PBGA-B54
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
length 15.5 mm 15.5 mm 15.5 mm 15.5 mm 15.5 mm 15.5 mm 15.5 mm 15.5 mm 15.5 mm
memory density 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 16 16 16 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1
Number of terminals 54 54 54 54 54 54 54 54 54
word count 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words
character code 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 70 °C 85 °C 85 °C 85 °C 85 °C 85 °C 70 °C
Minimum operating temperature -25 °C -25 °C -25 °C -25 °C -40 °C -40 °C -25 °C -40 °C -25 °C
organize 32MX16 32MX16 32MX16 32MX16 32MX16 32MX16 32MX16 32MX16 32MX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA
Encapsulate equivalent code BGA54,9X9,32 BGA54,9X9,32 BGA54,9X9,32 BGA54,9X9,32 BGA54,9X9,32 BGA54,9X9,32 BGA54,9X9,32 BGA54,9X9,32 BGA54,9X9,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192 8192 8192 8192 8192
Maximum seat height 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm
self refresh YES YES YES YES YES YES YES YES YES
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A
Maximum slew rate 0.19 mA 0.16 mA 0.17 mA 0.17 mA 0.16 mA 0.17 mA 0.16 mA 0.19 mA 0.19 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
surface mount YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER INDUSTRIAL INDUSTRIAL OTHER INDUSTRIAL OTHER
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 9.5 mm 9.5 mm 9.5 mm 9.5 mm 9.5 mm 9.5 mm 9.5 mm 9.5 mm 9.5 mm
Maker SAMSUNG SAMSUNG - SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG

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