K4S511533C-YN1L datasheet, PDF

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K4S511533C-YN1L: DescriptionSynchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54; Categorystorage storage; File Size117KB，8 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S511533C-YN1L Overview

Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54

K4S511533C-YN1L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	LFBGA, BGA54,9X9,32
Contacts	54
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B54
JESD-609 code	e0
length	15.5 mm
memory density	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.3 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.16 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	9.5 mm

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	K4S511533C-YN1L	K4S511533C-YL1L	K4S511533C-YL1H	K4S511533C-YN1H	K4S511533C-YP1L	K4S511533C-YP1H	K4S511533C-YP80	K4S511533C-YN80	K4S511533C-YL80
Description	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32	LFBGA, BGA54,9X9,32
Contacts	54	54	54	54	54	54	54	54	54
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	7 ns	7 ns	7 ns	7 ns	7 ns	7 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	125 MHz	125 MHz	125 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
length	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm	15.5 mm
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	54	54	54	54	54	54	54	54	54
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C	70 °C
Minimum operating temperature	-25 °C	-25 °C	-25 °C	-25 °C	-40 °C	-40 °C	-40 °C	-25 °C	-25 °C
organize	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
Encapsulate equivalent code	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192
Maximum seat height	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.16 mA	0.16 mA	0.17 mA	0.17 mA	0.16 mA	0.17 mA	0.19 mA	0.19 mA	0.19 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	OTHER	OTHER
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm	9.5 mm
Maker	SAMSUNG	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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