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MT36HTJ51272PY-40EXX

Description
DDR DRAM Module, 512MX72, 0.6ns, CMOS, LEAD FREE, DIMM-240
Categorystorage    storage   
File Size1MB,46 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
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MT36HTJ51272PY-40EXX Overview

DDR DRAM Module, 512MX72, 0.6ns, CMOS, LEAD FREE, DIMM-240

MT36HTJ51272PY-40EXX Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeDIMM
package instructionLEAD FREE, DIMM-240
Contacts240
Reach Compliance Codecompliant
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N240
JESD-609 codee4
memory density38654705664 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals240
word count536870912 words
character code512000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize512MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
DDR2 SDRAM Registered DIMM
MT36HTJ51272(P) – 4GB
For component information, please refer to the Micron
Web site:
www.micron.com/products/ddr2
Features
• 240-pin, registeed dual in-line memory module
(RDIMM)
• Fast data transfer rates: PC2-3200, PC2-4200, or
PC2-5300
• Utilizes 400 MT/s, 533MT/s, and 667 MT/s DDR2
stacked SDRAM components
• Supports ECC error detection and correction
• 4GB (512 Meg x 72)
• V
DD
= V
DD
Q = +1.8V
• V
DDSPD
= +1.7V to +3.6V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
operation
• Supports duplicate output strobe (RDQS/RDQS#)
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial Presence Detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Figure 1:
240-Pin DIMM (MO-237 R/C “K”)
Height 1.18in. (29.97mm)
Options
• Parity
• Package
240-pin DIMM (lead-free)
• Frequency/CAS Latency
1
3.0ns @ CL = 5 (DDR2-667)
2
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
• PCB Height
1.18in. (29.97mm)
Marking
P
Y
-667
-53E
-40E
Notes: 1. CL = CAS (READ) Latency; Registered mode
will add one clock cycle to CL.
2. Contact Micron for product availability.
pdf: 09005aef80ef2a81, source: 09005aef80ef1c07
HTJ36C512x72G_1.fm - Rev. C 4/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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Description DDR DRAM Module, 512MX72, 0.6ns, CMOS, LEAD FREE, DIMM-240 DDR DRAM Module, 512MX72, 0.6ns, CMOS, LEAD FREE, DIMM-240 DDR DRAM Module, 512MX72, 0.45ns, CMOS, LEAD FREE, DIMM-240 DDR DRAM Module, 512MX72, 0.45ns, CMOS, LEAD FREE, DIMM-240 DDR DRAM Module, 512MX72, 0.5ns, CMOS, LEAD FREE, DIMM-240
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code DIMM DIMM DIMM DIMM DIMM
package instruction LEAD FREE, DIMM-240 DIMM, LEAD FREE, DIMM-240 DIMM, LEAD FREE, DIMM-240
Contacts 240 240 240 240 240
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 0.6 ns 0.6 ns 0.45 ns 0.45 ns 0.5 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240
JESD-609 code e4 e4 e4 e4 e4
memory density 38654705664 bit 38654705664 bit 38654705664 bit 38654705664 bit 38654705664 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
memory width 72 72 72 72 72
Number of functions 1 1 1 1 1
Number of ports 1 1 1 1 1
Number of terminals 240 240 240 240 240
word count 536870912 words 536870912 words 536870912 words 536870912 words 536870912 words
character code 512000000 512000000 512000000 512000000 512000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C
organize 512MX72 512MX72 512MX72 512MX72 512MX72
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 260 260 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
self refresh YES YES YES YES YES
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER OTHER
Terminal surface Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au)
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30 30

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