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MSCD200-08

Description
200 A, 800 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size209KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MSCD200-08 Overview

200 A, 800 V, SILICON, RECTIFIER DIODE

MSCD200-08 Parametric

Parameter NameAttribute value
package instructionR-XUFM-X3
Contacts3
Manufacturer packaging codeCASE D2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresUL RECOGNIZED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current6800 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current200 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
MSKD200 ; MSAD200 ; MSCD200
Glass Passivated Rectifier
Diode Modules
V
RRM
800 to 1800V
I
FAV
200 Amp
Applications
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Circuit
Features
Blocking voltage:
800 to 1800V
Heat transfer through aluminum oxide ceramic
isolated metal baseplate
Glass passivated chip
Module Type
TYPE
MSKD200-08
MSKD200-12
MSKD200-16
MSKD200-18
MSAD200-08
MSAD200-12
MSAD200-16
MSAD200-18
MSCD200-08
MSCD200-12
MSCD200-16
MSCD200-18
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
I
FAV
Tc=100℃
I
FSM
t=10mS Tvj =45℃
2
it
t=10mS Tvj =45℃
a.c.50Hz;r.m.s.;1min
V
isol
T
vj
T
stg
Mt
Ms
Weight
To terminals(M6)
To heatsink(M6)
Module
Values
200
6800
231200
3000
-40 to 150
-40 to 125
5±15%
5±15%
160
Units
A
A
A
2
s
V
Nm
Nm
g
Thermal Characteristics
Symbol
Conditions
Per diode
R
th(j-c)
Module
R
th(c-s)
Electrical Characteristics
Symbol
Conditions
V
FM
T=25℃ I
FM
=300A
T
vj
=T
vjM
V
RD
=V
RRM
I
RD
MSKD200_MSAD200_MSCD200 - Rev 1
Dec, 2009
1/3
Values
0.21
0.05
Units
℃/W
℃/W
Values
1.3
≤9
Units
V
mA
www.microsemi.com

MSCD200-08 Related Products

MSCD200-08 MSCD200-16 MSKD200-08 MSKD200-12
Description 200 A, 800 V, SILICON, RECTIFIER DIODE 200 A, 1600 V, SILICON, RECTIFIER DIODE 200 A, 800 V, SILICON, RECTIFIER DIODE 200 A, 1200 V, SILICON, RECTIFIER DIODE
package instruction R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3
Contacts 3 3 3 3
Manufacturer packaging code CASE D2 CASE D2 CASE D2 CASE D2
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3
Maximum non-repetitive peak forward current 6800 A 6800 A 6800 A 6800 A
Number of components 2 2 2 2
Phase 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Maximum output current 200 A 200 A 200 A 200 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 1600 V 800 V 1200 V
surface mount NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER
Maximum forward voltage (VF) 1.3 V - 1.3 V 1.3 V
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