SIHFBC30L-GE3 datasheet, PDF - EEWORLD Datasheet

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SIHFBC30L-GE3: DescriptionTRANSISTOR 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size290KB，10 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHFBC30L-GE3 Overview

TRANSISTOR 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power

SIHFBC30L-GE3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	290 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	3.6 A
Maximum drain current (ID)	3.6 A
Maximum drain-source on-resistance	2.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	74 W
Maximum pulsed drain current (IDM)	14 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

4.6

Single

FEATURES

600

2.2

•

Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount (IRFBC30S, SiHFBC30S)

• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)

• Available in Tape and Reel (IRFBC30S, SiHFBC30S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC30L, SiHFBC30L) is a available

for low-profile applications.

PAK (TO-263)

SiHFBC30STRL-GE3

IRFBC30STRLPbF

SiHFBC30STL-E3

PAK (TO-262)

SiHFBC30L-GE3

IRFBC30LPbF

SiHFBC30L-E3

PAK

(TO-262)

PAK (TO-263)

DESCRIPTION

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHFBC30S-GE3

IRFBC30SPbF

SiHFBC30S-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

b, e

Avalanche Current

Repetiitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

= 25 °C

Current

a, e

at 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

for 10 s

LIMIT

600

± 20

3.6

2.3

0.59

290

3.6

7.4

3.1

3.0

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 41 mH, R

= 25

,

= 3.6 A (see fig. 12).

c. I



3.6 A, dI/dt



60 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. Uses IRFBC30, SiHFBC30 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91111

S11-1053-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFBC30L-GE3 Related Products

	SIHFBC30L-GE3	SIHFBC30STRL-GE3	SIHFBC30S-GE3
Description	TRANSISTOR 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power	TRANSISTOR 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power	TRANSISTOR 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	TO-262AA	D2PAK	D2PAK
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	4	4
Reach Compliance Code	unknown	unknown	unknown
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	290 mJ	290 mJ	290 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V	600 V
Maximum drain current (Abs) (ID)	3.6 A	3.6 A	3.6 A
Maximum drain current (ID)	3.6 A	3.6 A	3.6 A
Maximum drain-source on-resistance	2.2 Ω	2.2 Ω	2.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA	TO-263AB	TO-263AB
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1
Number of terminals	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	74 W	74 W	74 W
Maximum pulsed drain current (IDM)	14 A	14 A	14 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Vishay	-	Vishay
Shell connection	-	DRAIN	DRAIN

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