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BTD2114N3

Description
High Current Gain Medium Power NPN Epitaxial Planar Transistor
File Size241KB,8 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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BTD2114N3 Overview

High Current Gain Medium Power NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C857N3
Issued Date : 2012.01.02
Revised Date :
Page No. : 1/8
High Current Gain Medium Power NPN Epitaxial Planar Transistor
AUDIO MUTING APPLICATION
BTD2114N3
Features
High Emitter-Base voltage, V
EBO
=12V(min).
High DC current gain, h
FE
=1200(min.) @V
CE
=3V, I
C
=10mA.
Low V
CESAT
, V
CESAT
=0.16V typ. @ I
C
=500mA, I
B
=20mA.
Pb-free and halogen-free package.
BV
CEO
I
C
R
CE(SAT)
20V
500mA
0.32Ω(typ)
Symbol
BTD2114N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
R
θJA
Tj ; Tstg
Limit
30
20
12
500
1
50
225
556
-55~+150
Unit
V
V
V
mA
A
mA
mW
°C/W
°C
BTD2114N3
CYStek Product Specification
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