CMLM0708ABK datasheet, PDF - EEWORLD Datasheet

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CMLM0708ABK: DescriptionSmall Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6; CategoryDiscrete semiconductor The transistor; File Size585KB，2 Pages; ManufacturerCentral Semiconductor

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CMLM0708ABK Overview

Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6

CMLM0708ABK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PACKAGE-6
Contacts	6
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.28 A
Maximum drain current (ID)	0.28 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-F6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

CMLM0708ABK Related Products

	CMLM0708ABK	CMLM0708ABKLEADFREE	CMLM0708ATR
Description	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6	Transistor	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6
Is it Rohs certified?	incompatible	conform to	incompatible
package instruction	PACKAGE-6	,	PACKAGE-6
Reach Compliance Code	not_compliant	compliant	not_compliant
Maximum drain current (Abs) (ID)	0.28 A	0.28 A	0.28 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e3	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W
surface mount	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Maker	Central Semiconductor	-	Central Semiconductor
Contacts	6	-	6
ECCN code	EAR99	-	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	-	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	-	60 V
Maximum drain current (ID)	0.28 A	-	0.28 A
Maximum drain-source on-resistance	2 Ω	-	2 Ω
Maximum feedback capacitance (Crss)	5 pF	-	5 pF
JESD-30 code	R-PDSO-F6	-	R-PDSO-F6
Number of components	2	-	2
Number of terminals	6	-	6
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Certification status	Not Qualified	-	Not Qualified
Terminal form	FLAT	-	FLAT
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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