DDR DRAM, 256MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | SK Hynix |
Parts packaging code | BGA |
package instruction | TFBGA, BGA96,9X16,32 |
Contacts | 96 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | MULTI BANK PAGE BURST |
Maximum access time | 0.225 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 800 MHz |
I/O type | COMMON |
interleaved burst length | 4,8 |
JESD-30 code | R-PBGA-B96 |
length | 13 mm |
memory density | 4294967296 bit |
Memory IC Type | DDR DRAM |
memory width | 16 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 96 |
word count | 268435456 words |
character code | 256000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -45 °C |
organize | 256MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA96,9X16,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 1.35 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 4,8 |
Maximum standby current | 0.02 A |
Maximum slew rate | 0.24 mA |
Maximum supply voltage (Vsup) | 1.45 V |
Minimum supply voltage (Vsup) | 1.283 V |
Nominal supply voltage (Vsup) | 1.35 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 9.4 mm |
H5TC4G63MFR-PBI | H5TC4G63MFR-G7I | H5TC4G63MFR-H9I | H5TC4G83MFR-PBI | H5TC4G83MFR-H9I | H5TC4G83MFR-G7I | |
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Description | DDR DRAM, 256MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | DDR DRAM, 256MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | DDR DRAM, 512MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 512MX8, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 512MX8, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to |
Maker | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
Parts packaging code | BGA | BGA | BGA | BGA | BGA | BGA |
package instruction | TFBGA, BGA96,9X16,32 | TFBGA, BGA96,9X16,32 | TFBGA, BGA96,9X16,32 | TFBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 |
Contacts | 96 | 96 | 96 | 78 | 78 | 78 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
Maximum access time | 0.225 ns | 0.3 ns | 0.255 ns | 0.225 ns | 0.255 ns | 0.3 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 800 MHz | 533 MHz | 667 MHz | 800 MHz | 667 MHz | 533 MHz |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
interleaved burst length | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
JESD-30 code | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 |
length | 13 mm | 13 mm | 13 mm | 11.1 mm | 11.1 mm | 11.1 mm |
memory density | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit |
Memory IC Type | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
memory width | 16 | 16 | 16 | 8 | 8 | 8 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 96 | 96 | 96 | 78 | 78 | 78 |
word count | 268435456 words | 268435456 words | 268435456 words | 536870912 words | 536870912 words | 536870912 words |
character code | 256000000 | 256000000 | 256000000 | 512000000 | 512000000 | 512000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
Minimum operating temperature | -45 °C | -45 °C | -45 °C | -45 °C | -45 °C | -45 °C |
organize | 256MX16 | 256MX16 | 256MX16 | 512MX8 | 512MX8 | 512MX8 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
Encapsulate equivalent code | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
power supply | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
Maximum seat height | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
self refresh | YES | YES | YES | YES | YES | YES |
Continuous burst length | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
Maximum standby current | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
Maximum slew rate | 0.24 mA | 0.24 mA | 0.24 mA | 0.17 mA | 0.165 mA | 0.145 mA |
Maximum supply voltage (Vsup) | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V |
Minimum supply voltage (Vsup) | 1.283 V | 1.283 V | 1.283 V | 1.283 V | 1.283 V | 1.283 V |
Nominal supply voltage (Vsup) | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
surface mount | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
Terminal form | BALL | BALL | BALL | BALL | BALL | BALL |
Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
width | 9.4 mm | 9.4 mm | 9.4 mm | 9.4 mm | 9.4 mm | 9.4 mm |