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VUO160

Description
3 PHASE, 139 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size149KB,5 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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VUO160 Overview

3 PHASE, 139 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE

VUO160 Parametric

Parameter NameAttribute value
Number of terminals5
Number of components6
Maximum average input current139 A
Processing package descriptionROHS COMPLIANT, MODULE-5
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formUNSPECIFIED
terminal coatingNOT SPECIFIED
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureBRIDGE, 6 ELEMENTS
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase3
Maximum repetitive peak reverse voltage1200 V
Maximum non-repetitive peak forward current1600 A

VUO160 Related Products

VUO160 VUO160-08NO7
Description 3 PHASE, 139 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
state ACTIVE ACTIVE
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

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