Synchronous DRAM Module, 64MX64, CMOS, SODIMM-144
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | MODULE |
package instruction | DIMM, |
Contacts | 144 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Other features | AUTO/SELF REFRESH |
JESD-30 code | R-XDMA-N144 |
memory density | 4294967296 bit |
Memory IC Type | SYNCHRONOUS DRAM MODULE |
memory width | 64 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 144 |
word count | 67108864 words |
character code | 64000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 64MX64 |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
self refresh | YES |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
WED3DG6465V10D1 | WED3DG6465V7D1 | WED3DG6465V75D1 | |
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Description | Synchronous DRAM Module, 64MX64, CMOS, SODIMM-144 | Synchronous DRAM Module, 64MX64, CMOS, SODIMM-144 | Synchronous DRAM Module, 64MX64, CMOS, SODIMM-144 |
Is it lead-free? | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible |
Maker | Microsemi | Microsemi | Microsemi |
Parts packaging code | MODULE | MODULE | MODULE |
package instruction | DIMM, | DIMM, | DIMM, |
Contacts | 144 | 144 | 144 |
Reach Compliance Code | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 |
access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 code | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 |
memory density | 4294967296 bit | 4294967296 bit | 4294967296 bit |
Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
memory width | 64 | 64 | 64 |
Number of functions | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 |
Number of terminals | 144 | 144 | 144 |
word count | 67108864 words | 67108864 words | 67108864 words |
character code | 64000000 | 64000000 | 64000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C |
organize | 64MX64 | 64MX64 | 64MX64 |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | DIMM | DIMM | DIMM |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified |
self refresh | YES | YES | YES |
Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V |
Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V |
surface mount | NO | NO | NO |
technology | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD |
Terminal location | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |