2ES032XXXJL
2ES032XXXJL SERIES TRANSIENT VOLTAGE SUPPRESSORS
DESCRIPTION
2ES032XXXJL series are transient voltage suppressors
diode chips for plastic package that fabricated in silicon
epitaxial planar technology;
Excellent clamping capability;
Fast response time ;
Low leakage;
ESD>16KV(Human Body Model);
Top metal is AL, Back metal is Au;
Chip size: 320μm X 320μm;
Chip Thickness: 180±20μm.
2ES032XXX JLCHIP TOPOGRAPHY
La: Chip Size: 320μm;
Lb: Pad Size: 180μm;
ABSOLUTE MAXIMUM RATINGS
Characteristics
Total Power Dissipation@ T
amb
=25°C
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Value
200
175
-50~+175
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
Parameters
Maximum reverse peak pulse current
Clamping voltage @ I
PP
Working peak reverse voltage
Maximum reverse leakage current @ V
RWM
Breakdown voltage @ I
T
Test current
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2008.03.17
Page 1 of 2
2ES032XXXJL
ELECTRICAL CHARACTERISTICS
(For packaged diodes, T
amb
==25°C)
V
RWM
(V)
Max.
2ES032025JL
2ES032033JL
2ES032050JL
2ES032060JL
2ES032070JL
2ES032120JL
2.5
3.3
5.0
6.0
7.0
12.0
I
R
(μA)@
V
RWM
Max.
6.0
0.05
0.05
0.01
0.01
0.01
V
BR
(V)
@IT
Typ.
4.0
5.0
6.2
6.8
7.5
14.1
I
T
mA
1.0
1.0
1.0
1.0
1.0
1.0
V
C
(V)@
Max I
PP
Max.
10.9
14.1
18.6
20.5
22.7
25.0
I
PP
(A)*
Max
11.0
11.2
9.4
8.8
8.8
9.6
P
PK
(W)
Max
120
158
174
181
200
240
C(PF)
Typ.
145
105
80
70
65
55
Type
Note: 1. V
F
<0.9V@IF=10mA for all types;
2. * 8×20μm plus waveform.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2008.03.17
Page 2 of 2
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