MTD5P06VT4 datasheet, PDF - EEWORLD Datasheet

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MTD5P06VT4: Description5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size834KB，9 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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MTD5P06VT4 Overview

5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3

MTD5P06VT4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Rochester Electronics
package instruction	CASE 369C-01, DPAK-3
Contacts	3
Manufacturer packaging code	CASE 369C-01
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	125 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	18 A
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

MTD5P06VT4 Preview

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MTD5P06V

Preferred Device

Power MOSFET

5 Amps, 60 Volts P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

•

Avalanche Energy Specified

•

DSS

and V

DS(on)

Specified at Elevated Temperature

http://onsemi.com

(BR)DSS

60 V

DS(on)

TYP

340 mW

P−Channel

MAX

5.0 A

These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

Unit

Vdc

Vpk

Adc

Apk

Watts

W/°C

Watts

°C

1 2

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

= 1.0 MΩ)

Gate−to−Source Voltage

−

Continuous

−

Non−repetitive (t

≤

10 ms)

Drain Current

−

Continuous @ 25°C

Drain Current

−

Continuous @ 100°C

Drain Current

−

Single Pulse (t

≤

μs)

Total Power Dissipation @ 25°C

Derate above 25°C

Total Power Dissipation @ T

= 25°C

(Note 2)

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy

−

Starting T

= 25°C

= 25 Vdc, V

= 10 Vdc, Peak

= 5 Apk, L = 10 mH, R

= 25

Ω)

Thermal Resistance

−

Junction−to−Case

−

Junction−to−Ambient (Note 1)

−

Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 sec

Symbol

DSS

DGR

GSM

Value

0.27

2.1

−55

175

125

MARKING DIAGRAMS

Drain

YWW

5P06V

Drain

Gate

Source

Drain

YWW

5P06V

1 2 3

Gate Drain Source

Package

DPAK

Straight Lead

DPAK

Shipping

75 Units/Rail

2500 Tape & Reel

Publication Order Number:

MTD5P06V/D

DPAK

CASE 369C

Style 2

, T

stg

θJC

θJA

3.75

100

71.4

260

°C/W

DPAK

CASE 369D

Style 2

5P06V

Device Code

= Year

= Work Week

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum

recommended pad size.

2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.

ORDERING INFORMATION

Device

MTD5P06V

MTD5P06V−1

MTD5P06VT4

Preferred

devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

March, 2006

−

Rev. 5

MTD5P06V

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

= 0 Vdc, I

= 0.25 mAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

= 60 Vdc, V

= 0 Vdc)

= 60 Vdc, V

= 0 Vdc, T

= 150°C)

Gate−Body Leakage Current (V

15 Vdc, V

= 0 Vdc)

ON CHARACTERISTICS

(Note 3)

Gate Threshold Voltage

= V

, I

= 250

μAdc)

Threshold Temperature Coefficient (Negative)

Static Drain−Source On−Resistance (V

= 10 Vdc, I

= 2.5 Adc)

Drain−Source On−Voltage

= 10 Vdc, I

= 5 Adc)

= 10 Vdc, I

= 2.5 Adc, T

= 150°C)

Forward Transconductance

= 15 Vdc, I

= 2.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS

(Note 4)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

= 30 Vdc, I

= 5 Adc,

= 10 Vdc,

= 9.1

Ω)

d(on)

d(off)

= 48 Vdc, I

= 5 Adc,

= 10 Vdc)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

= 5 Adc, V

= 0 Vdc)

= 5 Adc, V

= 0 Vdc, T

= 150°C)

Vdc

−

1.72

1.34

0.42

3.5

−

μC

−

3.0

5.0

−

= 25 Vdc, V

= 0 Vdc,

f = 1.0 MHz)

iss

oss

rss

−

367

140

510

200

GS(th)

Vdc

2.0

−

1.5

2.8

4.7

0.34

−

3.6

4.0

−

0.45

2.7

2.6

Mhos

−

mV/°C

Ohm

Vdc

(BR)DSS

Vdc

−

61.2

−

100

mV/°C

μAdc

Symbol

Min

Typ

Max

Unit

DSS

GSS

nAdc

DS(on)

Reverse Recovery Time

= 5 Adc, V

= 0 Vdc,

/dt = 100 A/μs)

Reverse Recovery Stored

Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

3. Pulse Test: Pulse Width

≤

300

μs,

Duty Cycle

≤

2%.

4. Switching characteristics are independent of operating junction temperature.

−

4.5

7.5

−

http://onsemi.com

MTD5P06V

TYPICAL ELECTRICAL CHARACTERISTICS

= 10V

I D , DRAIN CURRENT (AMPS)

= 25°C

I D , DRAIN CURRENT (AMPS)

≥

10 V

= −55°C

25°C

100°C

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

R DS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)

Figure 2. Transfer Characteristics

0.6

0.55

0.5

0.45

0.4

0.35

0.3

0.25

0.2

, DRAIN CURRENT (AMPS)

− 55°C

25°C

= 10 V

= 100°C

0.4

= 25°C

= 10 V

0.35

0.3

15 V

0.25

0.2

, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

RDS(on) , DRAIN−TO−SOURCE RESISTANCE

(NORMALIZED)

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

−50

−25

100

125

, JUNCTION TEMPERATURE (°C)

150

175

I DSS , LEAKAGE (nA)

= 10 V

= 2.5 A

100

= 0 V

= 125°C

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

Temperature

http://onsemi.com

Figure 6. Drain−To−Source Leakage

Current versus Voltage

MTD5P06V

POWER MOSFET SWITCHING

Switching behavior is most easily modeled and predicted

by recognizing that the power MOSFET is charge

controlled. The lengths of various switching intervals (Δt)

are determined by how fast the FET input capacitance can

be charged by current from the generator.

The published capacitance data is difficult to use for

calculating rise and fall because drain−gate capacitance

varies greatly with applied voltage. Accordingly, gate

charge data is used. In most cases, a satisfactory estimate of

average input current (I

G(AV)

) can be made from a

rudimentary analysis of the drive circuit so that

t = Q/I

G(AV)

During the rise and fall time interval when switching a

resistive load, V

remains virtually constant at a level

known as the plateau voltage, V

SGP

. Therefore, rise and fall

times may be approximated by the following:

= Q

x R

/(V

−

GSP

)

= Q

x R

GSP

where

= the gate drive voltage, which varies from zero to V

= the gate drive resistance

and Q

and V

GSP

are read from the gate charge curve.

During the turn−on and turn−off delay times, gate current is

not constant. The simplest calculation uses appropriate

values from the capacitance curves in a standard equation for

voltage change in an RC network. The equations are:

d(on)

= R

iss

In [V

/(V

−

GSP

)]

d(off)

= R

iss

In (V

GSP

)

1000

900

800

C, CAPACITANCE (pF)

700

600

500

400

300

200

100

= 0 V

rss

oss

iss

rss

iss

= 0 V

The capacitance (C

iss

) is read from the capacitance curve at

a voltage corresponding to the off−state condition when

calculating t

d(on)

and is read at a voltage corresponding to the

on−state when calculating t

d(off)

At high switching speeds, parasitic circuit elements

complicate the analysis. The inductance of the MOSFET

source lead, inside the package and in the circuit wiring

which is common to both the drain and gate current paths,

produces a voltage at the source which reduces the gate drive

current. The voltage is determined by Ldi/dt, but since di/dt

is a function of drain current, the mathematical solution is

complex. The MOSFET output capacitance also

complicates the mathematics. And finally, MOSFETs have

finite internal gate resistance which effectively adds to the

resistance of the driving source, but the internal resistance

is difficult to measure and, consequently, is not specified.

The resistive switching time variation versus gate

resistance (Figure 9) shows how typical switching

performance is affected by the parasitic circuit elements. If

the parasitics were not present, the slope of the curves would

maintain a value of unity regardless of the switching speed.

The circuit used to obtain the data is constructed to minimize

common inductance in the drain and gate circuit loops and

is believed readily achievable with board mounted

components. Most power electronic loads are inductive; the

data in the figure is taken with a resistive load, which

approximates an optimally snubbed inductive load. Power

MOSFETs may be safely operated into an inductive load;

however, snubbing reduces switching losses.

= 25°C

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

http://onsemi.com

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MTD5P06VT4 Related Products

	MTD5P06VT4	MTD5P06V-1	MTD5P06V1	MTD5P06V
Description	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3	5A, 60V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics
package instruction	CASE 369C-01, DPAK-3	CASE 369D-01, DPAK-3	CASE 369D-01, DPAK-3	CASE 369C-01, DPAK-3
Contacts	3	3	3	3
Manufacturer packaging code	CASE 369C-01	CASE 369D-01	CASE 369D-01	CASE 369C-01
Reach Compliance Code	unknown	unknown	unknown	unknown
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	125 mJ	125 mJ	125 mJ	125 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V
Maximum drain current (ID)	5 A	5 A	5 A	5 A
Maximum drain-source on-resistance	0.45 Ω	0.45 Ω	0.45 Ω	0.45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	2	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	18 A	18 A	18 A	18 A
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	YES	NO	NO	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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