US3J datasheet, PDF - EEWORLD Datasheet

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US3J: DescriptionRectifier Diode, 1 Element, 3A, 600V V(RRM),; CategoryDiscrete semiconductor diode; File Size68KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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US3J Overview

Rectifier Diode, 1 Element, 3A, 600V V(RRM),

US3J Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.075 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL

US3J Related Products

	US3J	US3B	US3G	US3K	US3M
Description	Rectifier Diode, 1 Element, 3A, 600V V(RRM),	Rectifier Diode, 1 Element, 3A, 100V V(RRM),	Rectifier Diode, 1 Element, 3A, 400V V(RRM),	Rectifier Diode, 1 Element, 3A, 800V V(RRM),	Rectifier Diode, 1 Element, 3A, 1000V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V	1 V	1 V	1.7 V	1.7 V
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A	100 A
Number of components	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A
Maximum repetitive peak reverse voltage	600 V	100 V	400 V	800 V	1000 V
surface mount	YES	YES	YES	YES	YES
Maker	Galaxy Semi-Conductor Co., Ltd.	-	-	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.
package instruction	R-PDSO-C2	R-PDSO-C2	-	R-PDSO-C2	R-PDSO-C2
application	EFFICIENCY	EFFICIENCY	-	EFFICIENCY	EFFICIENCY
Diode component materials	SILICON	SILICON	-	SILICON	SILICON
JESD-30 code	R-PDSO-C2	R-PDSO-C2	-	R-PDSO-C2	R-PDSO-C2
Phase	1	1	-	1	1
Number of terminals	2	2	-	2	2
Minimum operating temperature	-55 °C	-55 °C	-	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Maximum reverse current	10 µA	10 µA	-	10 µA	10 µA
Maximum reverse recovery time	0.075 µs	0.05 µs	-	0.075 µs	0.075 µs
Terminal form	C BEND	C BEND	-	C BEND	C BEND
Terminal location	DUAL	DUAL	-	DUAL	DUAL

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