US3B datasheet, PDF - EEWORLD Datasheet

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US3B: DescriptionRectifier Diode, 1 Element, 3A, 100V V(RRM),; CategoryDiscrete semiconductor diode; File Size68KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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US3B Overview

Rectifier Diode, 1 Element, 3A, 100V V(RRM),

US3B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL
Base Number Matches	1

US3B Related Products

	US3B	US3G	US3J	US3K	US3M
Description	Rectifier Diode, 1 Element, 3A, 100V V(RRM),	Rectifier Diode, 1 Element, 3A, 400V V(RRM),	Rectifier Diode, 1 Element, 3A, 600V V(RRM),	Rectifier Diode, 1 Element, 3A, 800V V(RRM),	Rectifier Diode, 1 Element, 3A, 1000V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1.7 V	1.7 V	1.7 V
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A	100 A
Number of components	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A
Maximum repetitive peak reverse voltage	100 V	400 V	600 V	800 V	1000 V
surface mount	YES	YES	YES	YES	YES
package instruction	R-PDSO-C2	-	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
application	EFFICIENCY	-	EFFICIENCY	EFFICIENCY	EFFICIENCY
Diode component materials	SILICON	-	SILICON	SILICON	SILICON
JESD-30 code	R-PDSO-C2	-	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Phase	1	-	1	1	1
Number of terminals	2	-	2	2	2
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum reverse current	10 µA	-	10 µA	10 µA	10 µA
Maximum reverse recovery time	0.05 µs	-	0.075 µs	0.075 µs	0.075 µs
Terminal form	C BEND	-	C BEND	C BEND	C BEND
Terminal location	DUAL	-	DUAL	DUAL	DUAL
Maker	-	-	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.

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