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SI2301

Description
2.8 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size125KB,3 Pages
ManufacturerMAKO
Websitehttp://www.makosemi.hk
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SI2301 Overview

2.8 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET

SI2301 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage20 V
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption1.25 W
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current2.8 A
Maximum drain on-resistance0.1200 ohm
Maximum leakage current pulse10 A
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