SMD Type
NPN Transistors
BCP68
(KCP68)
SOT-223
6.50±0.2
3.00±0.1
Transistors
Unit:mm
。
10
■
Features
7.0±0.3
4
3.50±0.2
●
High current (max. 1 A)
●
Low voltage (max. 20 V)
●
Complements to BCP69
1
2
3
0.250
2.30 (typ)
1.80 (max)
Gauge Plane
2,4
1
3
0.02 ~ 0.1
1.Base
2.Collector
0.70±0.1
4.60 (typ)
3.Emitter
4.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current - Pulse
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Soldering Point
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
BP
P
C
R
θJA
R
θJS
T
J
T
stg
Rating
32
20
5
1
2
0.2
1.37
91
10
150
-65 to 150
W
℃/W
A
V
Unit
℃
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1
SMD Type
NPN Transistors
BCP68
(KCP68)
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
Test Conditions
Ic= 100
μA，
I
E
=0
Ic= 1 mA， I
B
=0
I
E
= 100μA， I
C
=0
V
CB
= 25 V , I
E
=0
V
CB
= 25 V , I
E
=0,T
J
=150℃
V
EB
= 5V , I
C
=0
I
C
=1 A, I
B
=100mA
I
C
=1 A, I
B
=100mA
V
CE
= 10V, I
C
= 5mA
V
CE
= 1V, I
C
= 1 A
V
CE
= 10V, I
C
= 5mA
DC current gain
Collector capacitance
Transition frequency
h
FE
C
ob
f
T
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 1 A
V
CB
= 5V, I
E
= Ie=0,f=1MHz
V
CE
= 5V, I
C
= 10mA,f=100MHz
40
50
85
60
Min
32
20
5
Transistors
Typ
Max
Unit
V
100
10
100
0.5
1.2
0.62
1
375
38
nA
uA
nA
V
pF
MHz
■
Classification of h
fe(2)
Type
Range
Marking
BCP68
85-375
BCP68
BCP68-16
100-250
BCP68-16
BCP68-25
160-375
BCP68-25
■
Typical Characterisitics
300
hFE
250
200
150
100
50
0
10
−1
V
CE
= 1 V.
1
10
10
2
10
3
IC (mA)
10
4
Fig.1 DC current gain; typical values.
2
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