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2SC1623

Description
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size102KB,2 Pages
ManufacturerMAKO
Websitehttp://www.makosemi.hk
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2SC1623 Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SC1623 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage50 V
Processing package descriptionMINIMOLD PACKAGE-3
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption0.2000 W
Transistor typeUniversal small signal
Minimum DC amplification factor90
Rated crossover frequency250 MHz

2SC1623 Related Products

2SC1623 C1623
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum collector current 0.1000 A 0.1000 A
Maximum Collector-Emitter Voltage 50 V 50 V
Processing package description MINIMOLD PACKAGE-3 MINIMOLD PACKAGE-3
state TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating tin lead tin lead
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Number of components 1 1
transistor applications amplifier amplifier
Transistor component materials silicon silicon
Maximum ambient power consumption 0.2000 W 0.2000 W
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 90 90
Rated crossover frequency 250 MHz 250 MHz
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